Sandisk
Senior Staff Datapath Design Engineer and Circuit Design Engineer, VLSI Design Engineering
On-site · Milpitas
About the role
The Memory Technology Group is at the core of the Legacy Sandisk Engineering Organization. We are building a cutting edge 3D memory in our multiple billion dollars Fab. Our memory provides performance, power, and endurance at a lower cost but on quality. The Memory Technology organization is a strategic entity for the company, and we are growing. Our group functions as a start-up within Sandisk, and offers a creative, fast paced, entrepreneurial work environment where you’ll be at the center of Sandisk innovation. If you thrive in a fast-paced, dynamic environment, are looking to be a part of a team that is developing exciting new processes, and you are eager to take on new opportunities and challenges with a sense of urgency and enthusiasm, then this could be an exciting opportunity for you.
Essential Duties and Responsibilities:
• Architect and design circuits at transistor level and gate level for leading-edge 3D NAND flash memory focusing on high-speed datapath circuit design and page buffers design.
• Perform block level and full chip circuit simulations to meet all performance specifications.
• RTL design, synthesis, static timing analysis and verification in verilog for page buffer and data path control logics.
• Conduct silicon debugging and evaluation with micro-probing.
• Collaborate with characterization engineers to fully characterize silicon, and partner with other designers to develop solutions for silicon issues.
• Generate detailed technical reports and presentations.
Required:
• Master's degree in Electrical Engineering or equivalent with 12 or more years of relevant experience.
• Knowledge and/or experience in data path design (Nand, DRAM, LPDDR or HBM)
• Knowledge in decoding concept and redundancy concept
• Knowledge and/or experience in Nand page buffer design
• Knowledge and/or experience in RTL design
• Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage
• Knowledge and/or experience in High speed I/O circuit is a big plus
• A strong device background and experience with evaluating new process technologies for use in design is preferred.