Staff Device Engineer, Technology Development Engineering

ESSENTIAL DUTIES AND RESPONSIBILITIES:

·       In this position, the individual will be responsible for development of the future generation of 3D NAND flash.

·       The work will involve electrical characterizations of flash memory chips with the goal of improving the reliability & performance of the memory Cell.

·       The individual will characterize memory cells and arrays, evaluate their reliability, optimize operating methods and parameters, and invent new solutions to tackle challenging problems.

·       The individual will also work at root cause analysis of cell reliability issues and identifying their solutions.

QUALIFICATIONS

·       This position requires a Ph.D. degree in Electrical Engineering, Applied physics, Materials Science or a related field. and 3+ years of relevant industry experience

·       It requires in-depth knowledge of semiconductor device physics and/or nano-electronics, familiarity with advanced semiconductor processing technologies, and knowledge in statistical methods for experimental design and data analysis.

·       The ideal individual must have proven ability to achieve results in a fast moving, dynamic environment.

·       The individual must be self-motivated and self-directed, however, must have also demonstrated ability to work well with people and be an efficient team player.